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Publication - Professor Bernard Stark

    Efficient base driver circuit for silicon carbide bipolar junction transistors

    Citation

    McNeill, N, Stark, BH, Finney, SJ, Holliday, D & Dymond, H, 2018, ‘Efficient base driver circuit for silicon carbide bipolar junction transistors’. Electronics Letters, vol 54., pp. 1450-1452

    Abstract

    The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a high-voltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.

    Full details in the University publications repository